A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nmhas been fabricated in a 45 nm microelectronics silicon-on-insulator foundryprocess. The resonant waveguide photodetector exploits carrier generation insilicon-germanium (SiGe) within a microring which is compatible withhigh-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias isobtained with a dark current of less than 20 pA.
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